Instructions for use Title Self-Ordering of Nanofacets on Vicinal SiC Surfaces
نویسندگان
چکیده
منابع مشابه
Self-ordering of nanofacets on vicinal SiC surfaces.
Vicinal 4H and 6H-SiC(0001) surfaces have been investigated using atomic force microscopy and cross-sectional high-resolution transmission electron microscopy. We observed the characteristic self-ordering of nanofacets on any surface, regardless of polytypes and vicinal angles, after gas etching at high temperature. Two facet planes are typically revealed: (0001) and high index (112;n) that are...
متن کاملSelf-assembling and self-ordering of Ge islands on vicinal Si(001) surfaces
Fabrication of semiconductor quantum dot structures with a regular in-plane spatial distribution and optimum size uniformity is highly desirable for applications of their novel optical and electronic properties. This remains a challenging subject, especially on the nanometer scale. The strain-driven self-assembled formation of Ge islands on Si during molecular beam epitaxy (MBE) in the Stranski...
متن کاملTitle of dissertation : STEPS ON VICINAL SURFACES : DENSITY - FUNCTIONAL THEORY CALCULATIONS AND TRANSCENDING MINIMAL STATISTICAL - MECHANICAL MODELS
Title of dissertation: STEPS ON VICINAL SURFACES: DENSITY-FUNCTIONAL THEORY CALCULATIONS AND TRANSCENDING MINIMAL STATISTICAL-MECHANICAL MODELS Rajesh Sathiyanarayanan Doctor of Philosophy, 2009 Dissertation directed by: Professor Theodore L. Einstein Department of Physics Using both density-functional theory calculations and Monte Carlo simulations, we compute various key parameters that are u...
متن کاملControlled surface functionalization via self-selective metal adsorption and pattern transformation on the vicinal Si(111) surface
We demonstrate a self-selective metal adsorption and pattern transformation process on vicinal Si 111 surfaces. When Au atoms are deposited onto the self-organized periodic Si 111 surface patterns, the Au atoms self-select to adsorb predominantly onto one of the two distinct domains, the Si 111 terrace or the stepbunched facet at different Au coverage. This leads to a systematic transformation ...
متن کاملStrain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates
The strain of GaN layers grown by Metal Organic Chemical Vapor Deposition (MOCVD) on three vicinal 4H-SiC substrates (0, 3.4 and 8 offcut from [0001] towards [11-20] axis) is investigated by X-ray Diffraction (XRD), Raman Scattering and Cathodoluminescence (CL). The strain relaxation mechanisms are analyzed for each miscut angle. At a microscopic scale, the GaN layer grown on on-axis substrate ...
متن کامل